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| IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 40 2.0 120 V m A Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS compliant) * Ultra low Rds(on) * 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N04S3-02 IPI120N04S3-02 IPP120N04S3-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0402 3PN0402 3PN0402 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=80 A Value 120 120 480 1880 20 300 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=230 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 40 2.1 3.0 4.0 1 A V 0.5 62 62 40 K/W Values typ. max. Unit - 1.65 1.35 100 100 2.3 2 nA m Rev. 1.0 page 2 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode2) Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 1) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=80 A, R G=1.3 V GS=0 V, V DS=25 V, f =1 MHz - 11000 3000 470 35 19 57 18 14300 pF 3900 710 ns Q gs Q gd Qg V plateau V DD=32 V, I D=80 A, V GS=0 to 10 V - 54 38 160 5 70 67 210 - nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=20 V, I F=I S, di F/dt =100 A/s - 0.83 70 145 120 480 1.2 - A V ns nC Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 306 A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 350 140 300 120 250 100 P tot [W] 200 80 150 I D [A] 0 50 100 150 200 60 100 40 50 20 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 10 s 100 s 1 ms 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 100 0.5 100 Z thJC [K/W] I D [A] 10-1 0.1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10 -3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 500 10 V 7V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 8 7 6 5 5V 5.5 V 6V 6.5 V 400 6V R DS(on) [m] 300 I D [A] 4 3 7V 200 5.5 V 2 100 5V 10 V 1 0 0 0 1 2 3 4 5 6 0 100 200 300 400 500 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 400 350 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD 3 2.5 300 250 R DS(on) [m] 175 C 25 C -55 C 2 I D [A] 200 150 100 50 0 2 3 4 5 6 7 1.5 1 0.5 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 3 V GS(th) [V] 2.5 230 A C [pF] 2300 A 104 Ciss Coss 2 103 Crss 1.5 1 -60 -20 20 60 100 140 180 102 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S= f(t AV) parameter: T j(start) 1000 25C 102 100 150C 100C 175 C 25 C 101 I AV [A] 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 I F [A] V SD [V] t AV [s] Rev. 1.0 page 6 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 13 Typical avalanche energy E AS = f(T j) parameter: I D 8000 7000 6000 5000 52 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 20 A 48 4000 40 A V BR(DSS) [V] 44 E AS [mJ] 3000 2000 80 A 40 36 1000 0 25 75 125 175 32 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 16 Gate charge waveforms V GS Qg 8V 32 V 10 8 V GS [V] 6 V g s(th) 4 2 Q g (th) Q gs 0 50 100 150 200 Q sw Q gd Q gate 0 Q gate [nC] Rev. 1.0 page 7 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Revision History Version Date Changes Rev. 1.0 page 9 2007-04-30 |
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